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Title:
Advances in semiconductor nanostructures : growth, characterization, properties and applications / edited by Alexander V. Latyshev, Anatoliy V. Dvurechenskii, Alexander L. Aseev.
Publisher:
Elsevier,
Copyright Date:
2017
Description:
xxiv, 527 pages : illustrations ; 24 cm
Subject:
Semiconductors.
Nanostructures.
Other Authors:
Latyshev, A. V. (Aleksandr VasilĀ£evich), editor.
Dvurechenskii, A. V., 1945- editor.
Aseev, A. L. (Aleksandr Leonidovich), editor.
Notes:
Includes bibliographical references and index.
Contents:
The optical multiplexor based on multiple coupled waveguides in silicon-on-insulator structures / A.V. Tsarev Two-dimensional semimetal in HgTe-based quantum wells / Z.D. Kvon, E.B. Olshanetsky, D.A. Kozlov, N.N. Mikhailov, S.A. Dvoretsky -- Nonlinear two-dimensional electron conductivity at high filling factors / A.A. Bykov, S.A. Vitkalov -- Silicon-based nanoheterostructures with quantum dots / A.V. Dvurechenskii, A.I. Yakimov -- Electron transport: from nanostructures to nanoelectromechanical systems / A.G. Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu. Zhdanov, D.A. Pokhabov -- Modeling of quantum transport and single-electron charging in GaAs/AlGaAs-nanostructures / O.A. Tkachenko, V.A. Tkachenko, Z.D. Kvon, D.V. Sheglov, A.L. Aseev -- Spectroscopy of vibrational states in low-dimensional semiconductor systems / A.G. Milekhin, D.R.T. Zahn -- Atomic processes on the silicon surface / A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev -- Atomic structure of semiconductor low-dimensional heterosystems / A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev -- Formation of GaAs step-terraced surfaces by annealing in equilibrium conditions / V.L. Alperovich, I.O. Akhundov, D.M. Kazantsev, N.S. Rudaya, E.E. Rodyakina, A.S. Kozhukhov, D.V. Sheglov, A.N. Karpov, N.L. Shwartz, A.S. Terekhov, A.V. Latyshev -- Atomic processes in the formation of strained Ge layers on Si(111) and (001) substrates within the Stransky--Krastanov growth mechanism / S.A. Teys -- Molecular beam epitaxy of CdxHg1-xTe / Yu.G. Sidorov, A.P. Anciferov, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, I.V. Sabinina, V.G. Remesnik, D.G. Ikusov, I.N. Uzhakov, G.Yu. Sidorov, V.D. Kuzmin, S.V. Rihlicky, V.A. Shvets, A.S. Mardezov, E.V. Spesivcev, A.K. Gutakovskii, A.V. Latyshev -- Surface morphologies obtained by Ge deposition on bare and oxidized silicon surfaces at different temperatures / A.A. Shklyaev, K.N. Romanyuk, S.S. Kosolobov, A.V. Latyshev -- Monte Carlo simulation of semiconductor nanostructure growth / I.G. Neizvestny, N.L. Shwartz -- The energy pulse-oriented crystallization phenomenon in solids (laser annealing) / A.V. Dvurechenskii -- Universality of the {113} habit plane in Si for mixed aggregation of vacancies and self-interstitial atoms provided by topological bond defect formation / L.I. Fedina, A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev -- Silicon-on-insulator structures produced by ion-beam synthesis and hydrogen transfer / I.E. Tyschenko, V.P. Popov -- Superminiature radiation sources based on semiconductor nanostructures / V.A. Haisler, A.V. Haisler, I.A. Derebezov, A.S. Yaroshevich, A.K. Bakarov, D.V. Dmitriev, A.K. Kalagin, A.I. Toropov, M.M. Kachanova, Yu.A. Zhivodkov, T.A. Gavrilova, A.S. Medvedev, L.A. Nenasheva, O.I. Semenova, K.V. Grachev, V.K. Sandyrev, A.S. Kozhukhov, D.V. Sheglov, D.B. Tretyakov, I.I. Beterov, V.M. Entin, I.I. Ryabtsev, A.V. Latyshev, A.L. Aseev -- Three-dimensional systems and nanostructures: technology, physics and applications / V.Ya. Prinz -- The nature of defects responsible for transport in a hafnia-based resistive random access memory element / D.R. Islamov, T.V. Perevalov, V.A. Gritsenko, V.Sh. Aliev, A.A. Saraev, V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, A. Chin -- The optical multiplexor based on multiple coupled waveguides in silicon-on-insulator structures / A.V. Tsarev
Summary:
"Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III--V, IV, and II--VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena." -- Publisher's web site.
ISBN:
0128105127
9780128105122
OCLC:
(OCoLC)952385610
Locations:
USUX851 -- Iowa State University - Parks Library (Ames)

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