The Locator -- [(title = "Final technical report")]

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Author:
Honsberg, C. (Christiana B.)
Title:
Novel high efficiency photovoltaic devices based on the III-N material system [electronic resource] : final technical report, 7 December 2005 - 29 August 2008 / C. Honsberg, W.A. Doolittle, and I. Ferguson.
Format:
[electronic resource] :
Publisher:
National Renewable Energy Laboratory,
Copyright Date:
2008
Description:
11 p. : digital, PDF file.
Subject:
Photovoltaic cells--Research.
Solar cells--Design and construction.
Other Authors:
Doolittle, W. A. (W. Alan)
Ferguson, Ian T.
National Renewable Energy Laboratory (U.S.)
Notes:
Title from title screen (viewed October 21, 2008). "October 2008."
Summary:
The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness.
OCLC:
(OCoLC)263025858
Locations:
USUX851 -- Iowa State University - Parks Library (Ames)
UPAX334 -- Upper Iowa University - Henderson-Wilder Library (Fayette)

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