713 records matched your query
02186aam a2200397Ka 4500 001 62099F1CFE5F11E2B6A414D3DAD10320 003 SILO 005 20130806010419 006 m d f 007 cr mn||||||||| 008 081021s2008 coua st f000 0 eng d 035 $a (OCoLC)263025858 040 $a SOE $c SOE $d GPO $d MvI $d SILO 074 $a 0430-P-05 (online) 086 0 $a E 9.18:NREL/SR-520-44186 088 $a NREL/SR-520-44186 100 1 $a Honsberg, C. $q (Christiana B.) 245 10 $a Novel high efficiency photovoltaic devices based on the III-N material system $h [electronic resource] : $b final technical report, 7 December 2005 - 29 August 2008 / $c C. Honsberg, W.A. Doolittle, and I. Ferguson. 246 30 $a Novel high efficiency pv devices based on the 3-nitride material system 256 $a Electronic data (1 PDF file : 587 Kb). 260 $a Golden, Colo. : $b National Renewable Energy Laboratory, $c [2008] 300 $a 11 p. : $b digital, PDF file. 538 $a Mode of access: Internet from the NREL web site. Address as of 2/2/09: http://www.nrel.gov/docs/fy09osti/44186.pdf ; current access available via PURL. 500 $a Title from title screen (viewed October 21, 2008). 500 $a "October 2008." 520 3 $a The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness. 650 0 $a Photovoltaic cells $x Research. 650 0 $a Solar cells $x Design and construction. 700 1 $a Doolittle, W. A. $q (W. Alan) 700 1 $a Ferguson, Ian T. 710 2 $a National Renewable Energy Laboratory (U.S.) 856 40 $u http://purl.access.gpo.gov/GPO/LPS108375 941 $a 2 952 $l UPAX334 $d 20230104042342.0 952 $l USUX851 $d 20160824084629.0 956 $a http://locator.silo.lib.ia.us/search.cgi?index_0=id&term_0=62099F1CFE5F11E2B6A414D3DAD10320Initiate Another SILO Locator Search