Machine generated contents note: 1. Molecular beam epitaxy: fundamentals, historical background and future prospects -- 2. Molecular beam epitaxy in the ultra-vacuum of space: present and near future -- 3. Growth of semiconductor nanowires by molecular beam epitaxy -- 4. Droplet epitaxy of nanostructures -- 5. Migration-enhanced epitaxy for low-dimensional structures -- 6. MBE growth of high-mobility 2DEG -- 7. Bismuth-containing III-V semiconductors: epitaxial growth and physical properties -- 8. Molecular beam epitaxy of GaAsBi and related quaternary alloys -- 9. MBE of dilute-nitride optoelectronic devices -- 10. Effect of antimony coverage on InAs/GaAs, 001, heteroepitaxy -- 11. Nonpolar cubic III-nitrides: from the basics of growth to device applications -- 12. Molecular beam epitaxy of low-bandgap InGaN -- 13. Molecular beam epitaxy of IV-VI semiconductors: multilayers, quantum dots and device applications -- 14. Epitaxial growth of thin films and quantum structures of II-VI visible-bandgap semiconductors -- 15. MBE of transparent semiconducting oxides -- 16. Zinc oxide materials and devices grown by MBE -- 17. Molecular beam epitaxy of complex oxides -- 18. Epitaxial systems combining oxides and semiconductors -- 19. Molecular beam epitaxy of III-V ferromagnetic semiconductors -- 20. Epitaxial magnetic layers grown by MBE: model systems to study the physics in nanomagnetism and spintronic -- 21. Atomic layer-by-layer molecular beam epitaxy of complex oxide films and heterostructures -- 22. Molecular beam epitaxy of semi-magnetic quantum dots -- 23. Graphene growth by molecular beam epitaxy -- 24. Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AIGaAs layers -- 25. Molecular beam epitaxial growth and exotic electronic structure of topological insulators -- 26. Thin films of organic molecules: interfaces and epitaxial growth -- 27. Molecular beam epitaxy of wide-gap II-VI laser heterostructures -- 28. MBE growth of THz quantum cascade lasers -- 29. Systems and technology for production-scale molecular beam epitaxy -- 30. Mass production of optoelectronic devices -- 31. Mass production of sensors grown by MBE.
Summary:
"This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage"-- Provided by publisher.
This resource is supported by the Institute of Museum and Library Services under the provisions of the Library Services and Technology Act as administered by State Library of Iowa.